forward bias

Complex object Carrier transport mechanisms are tunneling-recombination model at forward bias voltages .

正向偏压下，该异质结的电流输运机理为复合隧穿模型。

Under forward bias , strong N-UV light emission at 380 nm is observed .

正向偏压下，得到了较强的波长位于380nm的近紫外发光。

The positive-going signal subtracts from the forward bias of the lower transistor .

正向信号则使它的正向偏压减弱

Test of Reliability of High Power Devices by Measuring Their Parameters of Second Breakdown With Forward Bias

用正偏二次击穿测量法验证大功率器件的可靠性

When under forward bias , the structure of the filter is destroyed , signal is isolated .

当二极管正向偏置的时候，滤波器的结构被破坏，起到隔离的作用。

When forward bias is higher than 8 V , the electroluminescence of the device is observed .

在正向电压高于8V时，观测到了电致发光。

With sufficient forward bias , the diffusion capacitance can easily exceed the space charge region capacitance .

当正向偏压足够高时，扩散电容很容易超过空间电荷压电容。

It also use the forward bias offset PID control algorithm improved the water spraying control response speed and reduced control of overshoot .

采用的带偏置补偿PID控制回路提高了喷水流量控制的响应速度，并减少了控制超调；

This paper illustrates the physical essence transferred for the Collector Junction from reverse bias to forward bias .

本文简述了晶体管作开关运用时集电结由反偏状态向正偏状态转化的物理本质。

The current-voltage measurements at low temperatures showed a typical ( diode ) characteristic with a threshold voltage about 4.0 V at forward bias .

在低温下，二极管的I-V特性曲线显示了典型的p-n结整流特性，并且具有很低的开启电压（4V）。

The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer .

位移电流的机理只对反向偏压或要维持空间电荷层所需要的非常弱的正向偏压条件下的电容器才有用。

The results show that the device is of diode characteristics with its forward bias and reverse bias of 8 V and 12V , respectively .

结果表明，器件具有整流效应，正反向电压分别为8V和12V；

Under forward bias voltage , Ag + and I-moved to the electrode on their side respectively , and electrolytic reaction occurred to generate current .

在正向偏压下，两侧的银离子和碘离子相背运动到各自相邻电极上发生电解反应产生电流，器件实现导通。

The response of majority carrier trap under the forward bias low-injection pulse and the ratio of the capture constants of the two kinds of carriers

正向小注入脉冲下多子陷阱响应和两种载流子俘获率之比

Visible electroluminescence from the devices can be seen with naked eye when a forward bias greater than 6V is applied , while no light emission can be observed under reverse bias .

当正向偏压大于6V时，用肉眼可以观察到可见的电致发光，但在反向偏压下探测不到光发射。

The measured result shows that the forward bias current-voltage behavior of the device deviates from Shockley model of p-n junction . It is found that the dominant mechanism of carrier transport across the junction is dependent on carrier tunneling .

实验表明，器件正向偏压下的I－V特性偏离了pn结二极管的肖克莱模型的结果，并且载流子的主要输运机制与载流子隧穿有关。

When the forward bias voltage to the device , the magnetic conductance of the device is rising rapidly in the range of0to40mT ; with the further increase of the magnetic field , the magnetic conductivity increased slowly , and gradually become saturated .

当给器件加上正向小偏压时，器件的磁电导在0-40mT范围内迅速上升；随着磁场的进一步增大，该磁电导增加缓慢，并逐渐趋于饱和。

Under the condition of two kinds of free-carriers present simultaneously , We have analysed the relationship among the electric potential , electric field and the free-car-rier concentration of the p ~ + n junction in equilibrium and the forward bias without high injection .

在考虑到两种自由载流子同时存在的条件下，分析了该p~+n结在平衡态及正向偏置下（非大注入）的电位、电场分布及其中自由载流子浓度关系。

The results indicate that the current density of the fabricated p-n junction reaches 110 A / m2 when the forward bias voltage is 2.5 V , and the turn-on voltage value is about 0.75 V that are in agreement with the expected values .

系统测试结果表明，当p-n结正向偏压达到2.5V时，电流密度为109A/m2，启动电压为0.72V，与期待值一致。

The result indicates that the current in the film is in accord with the ohm current mechanism under the lower forward bias voltage , and that is the together result of both Schottky emission current and Frenkel-Poole emission current contribution under the higher forward bias voltage .

正向偏压较大时，薄膜中的电流主要是Schottky发射和Frenkel-Poole发射2种电流输运机制的共同作用结果。

Electrically induced visible light-emitting PS device with structure of ITO / PS / p-Si / Al were fabricated by means of evaporation-anodic oxidation method . The light emission of the device lasted for a few hours under 7.5V forward bias conditions . Luminescent and electronic properties were investigated .

采用蒸镀-阳极氧化法制备了多孔硅异质结（ITO/PS/p-Si/Al）电致发光器件，在7.5V较低电压下实现了数小时连续电致发光，并给出了该器件的发光和电学性能的测量结果。

A Low Power Low Voltage Low Noise Amplifier Utilizing Forward Body Bias and Gain Enhancement Techniques

一种采用正体偏置和增益增强技术的低电压低功耗低噪声放大器

The Linear Drain Current Degradation of n-MOSFET under Hot Carrier Stress with Forward Substrate Bias

热载流子应力下n-MOSFET线性漏电流的退化

The results show that as the stress time increase , turn-on voltage increase , DC current gain decrease , particularly at low forward base-emitter bias .

研究结果表明，随应力时间的增加，开启电压增加，直流电流增益下降，特别是在低E-B正偏电压时下降明显；

Reverse current and forward current at low bias were increased significantly .

老化前后Ⅰ-Ⅴ曲线结果显示，反向漏电流和正向小电压下的电流都有明显的增加。